Ultra-efficient DC-gated all-optical graphene switch

The ultrafast response and broadband absorption of all-optical graphene switches are highly desirable features for on-chip photonic switching. However, because is an atomically thin material, its guided optical modes relatively low, resulting in high saturation thresholds switching energies these devices. To boost the graphene, we present a practical design electrically-biased switch that integrated into silicon slot waveguides, which strongly confine mode slotted region enhance interaction with graphene. Moreover, incorporates slab layer hafnia dielectric to electrically tune threshold energy device by applying DC voltages <0.5 V. Using this device, extinction ratio (ER) 10.3dB, low insertion loss (IL) <0.7dB, ultra-efficient 79fJ/bit at 0.23V bias attainable 40um long switch. reported performance metrics promising expected serve needs next-generation computing systems.